Photoluminescence from Vacancy?Containing Defects in GaN

PHOTOLUMINESCENCE STUDY OF GaN

Photoluminescence study of undoped, doped GaN grown on (00.1), (11.0), (01.2)Αl 2 O 3 (100), (111)Si, and (00.1)6H—SiC substrates have been conducted. Strong bandedge emissions from all undoped samples and dopant-related emissions from doped samples were observed. Deep-level yellow emissioii centered around 2.2 eV was not observed from undoped GaN grown on 6H-SiC substrate, undoped GaN with opt...

Determination of acceptor concentration in GaN from photoluminescence

Defects in GaN Nanowires

High resolution and cross-sectional transmission electron microscopy (HRTEM, XTEM) were used to characterize common defects in wurtzite GaN nanowires grown via the vapor-liquid-solid (VLS) mechanism. High resolution transmission electron microscopy showed that these nanowires contained numerous (001) stacking defects interspersed with cubic intergrowths. Using cross-sectional transmission elect...

hermal quenching of photoluminescence from Er-doped GaN thin films

The green (537 and 558 nm) and near infrared (1.54 mm) photoluminescence (PL) spectra of Er-doped GaN thin films have been investigated as a function of temperature, excitation wavelength, and pump intensity. Thermal quenching measurements showed that the 31 4 2 4 integrated green Er PL intensity ( S / H → I ) remained nearly constant up to 150 K, but decreased at higher temperatures 3 / 2 11 /...

Polarized photoluminescence from single GaN nanorods: effects of optical confinement.

By measuring linearly polarized photoluminescence (PL) from single, isolated gallium nitride (GaN) nanorods with the rod diameters in the subwavelength regime (30-90 nm), we present clear evidence for size dependence of polarization anisotropy. The maximum polarization ratio at room temperature (approximately 0.9 with emission and excitation light polarized parallel to the long axis of nanorod)...